P algan



Keywords: p algan, electroluminescence; epitaxial layers; heterojunction; hole injection; ultraviolet emission
Description: We report on the optical and electrical properties of n-ZnO/p/-AlGaN heterojunctions. Ga doped n-type ZnO layers were grown using chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers. AlGaN epitaxial layers with 12 at.% Al were grown on 6H-SiC by hydride vapor phase epitaxy. Rectifying diode-like behavior with a threshold voltage of 3.2 V was achieved. Intense ultraviolet electroluminescence peaking at a wavelength of 390 nm was observed at 300 and 500 K as a result of hole-injection from the n-ZnO layer into the p-AlGaN layer of the heterostructure.

We report on the optical and electrical properties of n -ZnO/p /-AlGaN heterojunctions. Ga doped n -type ZnO layers were grown using chemical vapor deposition on Mg doped p -type AlGaN epitaxial layers. AlGaN epitaxial layers with 12 at.% Al were grown on 6H-SiC by hydride vapor phase epitaxy. Rectifying diode-like behavior with a threshold voltage of 3.2 V was achieved. Intense ultraviolet electroluminescence peaking at a wavelength of 390 nm was observed at 300 and 500 K as a result of hole-injection from the n -ZnO layer into the p -AlGaN layer of the heterostructure.

Presented at the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectric Applications, St. Petersburg, Russia.

Kalinina, E. V. Cherenkov, A. E. Onushkin, G. A. Alivov, Y. I. Look, D. C. Ataev, B. M. Omaev, A. K. & Chukichev, C. M. (2005). ZnO/AlGaN Ultraviolet Light Emitting Diodes. Zinc Oxide – A Material for Micro- and Optoelectronic Applications, 194. 211-216.






Photogallery P algan:


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p-GaN-i-GaN/AlGaN multiple-quantum well n-AlGaN back-illuminated ...


Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er ...


Quantitative observation and discrimination of AlGaN- and GaN ...


IEEE Xplore Abstract - p-GaN/AlGaN/GaN Enhancement-Mode HEMTs


SimuLED Brochure


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Ultralow-threshold electrically injected AlGaN nanowire ...


Engineering the Carrier Dynamics of InGaN Nanowire White Light ...


Research Express@NCKU - Articles Digest (Volume 7 Issue 4)


AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility ...


High efficiency and enhanced ESD properties of UV LEDs by ...


Current transport in graphene/AlGaN/GaN vertical heterostructures ...


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Presentation "Effect of Mg doping in the barrier of InGaN/GaN ...


Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN ...


Electric-field-induced impact ionization of excitons in GaN and ...


A magnetotransport study of AlGaN/GaN heterostructures on silicon ...